jiangsu changjiang electronics technology co., ltd to-220 -3l plastic-encapsulate transistors 2SB834 transistor (pnp) features z low collector - e mitter s aturation v oltage v ce(sat) =1.0 v (max) @ i c =-3a,i b =-0.3a z dc current gain h fe =60-200 @ i c =0.5a z complementary to npn 2sd880 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector- base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -7 v i c collector current -continuous -3 a p c collector power dissipation 1.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-50ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -7 v collector cut-off current i cbo v cb =-60v,i e =0 -100 a emitter cut-off current i ebo v eb =-7v,i c =0 -100 a h fe(1)* v ce =-5v,i c =-500ma 60 200 dc current gain h fe(2)* v ce =-5v,i c =-3a 20 collector-emitter saturation voltage v ce(sat)* i c =-3a,i b =-0.3a -1 v base-emitter voltage v be* v ce =-5v,i c =-500ma -1 v transition frequency f t v ce =-5v,i c =-500ma, f=1mhz 9 mhz turn-on time t on 0.4 s storage time t stg 1.7 s turn-off time t off v cc =-30v,i c =-2a, i b! =i b2 =-0.2a 0.5 s *pulse test. classification of h fe(1) rank o y range 60-120 100-200 to - 220 -3l 1. base 2. collector 3. emitter www.cj-elec.com 1 e,nov,2014
-0.1 -1 -10 10 100 1000 -200 -400 -600 -800 -1000 -1200 -0.1 -1 -10 -100 -1000 0 25 50 75 100 125 150 0 500 1000 1500 2000 -1 -10 -100 -1000 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -1100 -1200 -1300 -1400 -10 -100 -1000 -10 -100 -1000 -1 -10 -100 -1000 10 100 1000 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? -30 t a = 1 0 0 t a = 2 5 collcetor current i c (ma) base-emmiter voltage v be (mv) i c v be common emitter v ce =-5v collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 i c v besat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? t a =100 t a =25 =10 -3000 -3000 -3000 -3000 dc current gain h fe collector current i c (ma) common emitter v ce =-5v t a =25 t a =100 i c h fe ?? typical characterisitics 2SB834 -10ma -9ma -8ma -7ma -6ma -5ma -4ma -3ma -2ma i b =-1ma collector current i c (a) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic www.cj-elec.com 2 e,nov,2014 typical characteristics
www.cj-elec.com 3 e , nov ,2014 to- 2 20-3l package outline dimensions m i n m ax m i n m ax a 4. 4 70 4. 67 0 0 . 17 6 0. 1 84 a 1 2 . 52 0 2 . 8 20 0. 0 99 0 . 11 1 b 0. 7 10 0. 91 0 0 . 02 8 0. 0 36 b1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 c 0. 3 10 0. 53 0 0 . 01 2 0. 0 21 c 1 1 . 17 0 1 . 3 70 0. 0 46 0 . 05 4 d 10 . 01 0 10 . 31 0 0 . 39 4 0. 4 06 e 8. 5 00 8. 90 0 0 . 33 5 0. 3 50 e 1 12 . 06 0 12 . 46 0 0 . 47 5 0. 4 91 e e1 4 . 98 0 5 . 1 80 0. 1 96 0 . 20 4 f 2. 5 90 2. 89 0 0 . 10 2 0. 1 14 h 0. 0 00 0. 30 0 0 . 00 0 0. 0 12 l 13 . 40 0 13 . 80 0 0 . 52 8 0. 5 43 l1 3 . 56 0 3 . 9 60 0. 1 40 0 . 15 6 3 . 73 5 3 . 9 35 0. 1 47 0 . 15 5 sy m bo l d im e n s io n s in m illim e t e r s d im e n s io n s in in c h e s 0. 10 0 t y p 2 . 54 0 t y p
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